Growth of p-CuInSe2/n-Si heterojunction for near-infrared photodetection

Sungtae Kim; Temujin Enkhbat; Sang-Hun lee; Jae-Hyung Jang

doi:10.1117/12.2676320

6 October 2023 Growth of p-CuInSe2/n-Si heterojunction for near-infrared photodetection

Sungtae Kim, Temujin Enkhbat, Sang-Hun lee, Jae-Hyung Jang

Proceedings Volume PC12687, Infrared Sensors, Devices, and Applications XIII; PC126870D (2023) https://doi.org/10.1117/12.2676320
Event: SPIE Optical Engineering + Applications, 2023, San Diego, California, United States

Conference Poster

Abstract

Copper-indium-selenide (CISe) was directly grown on n-type silicon epilayer for the photodetector application. By employing low bandgap p-CISe as the photo-absorption layer, the cut-off wavelength of the photodetector can be extended to 1309 nm, that is far longer than the cut-off wavelength (1100 nm) of Si-based photodetectors. Even though the 1550-nm-based light detection and ranging (LiDAR) system is popular for its eye-safe properties compared to the conventional 908-nm-based LiDAR system, it experiences performance degradation under heavy rain and fog. The photodetectors responsive to 1300-nm-light are interesting because 1300-nm-based LiDAR system is less vulnerable to water absorption than 1550-nm-based system and is safer to human eye than 908-nm-based system. Furthermore, p-CISe/Si heterostructure enables the monolithic integration of near-infrared photodetector with Si-based readout circuit.

Citation Download Citation

Sungtae Kim, Temujin Enkhbat, Sang-Hun lee, and Jae-Hyung Jang "Growth of p-CuInSe2/n-Si heterojunction for near-infrared photodetection", Proc. SPIE PC12687, Infrared Sensors, Devices, and Applications XIII, PC126870D (6 October 2023); https://doi.org/10.1117/12.2676320

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