Presentation
22 November 2023 Recent Improvements in EUV lithography using multi-trigger resist
Carmen Popescu, Greg O'Callaghan, Alexandra McClelland, Catherine Storey, John Roth, Edward A. Jackson, Alex P. G. Robinson
Author Affiliations +
Abstract
Irresistible Materials (IM) is improving its Multi-Trigger Resist – a negative tone, high opacity molecular resist specifically designed for high speed EUV, and high-NA EUV lithography, capable of patterning well with thin films. Pitch 28nm dense patterns can be patterned at a dose of 32mJ/cm2, a line width of 12.0nm, and a biased LWR of 3.9nm. This resist formulation has also been used to pattern pillars at pitches of 34nm hexagonal with a dose of 42mJ/cm2 to achieve 17nm diameter pillars. P32 pillars have also been patterned with a dose of 76 mJ/cm2 and biased LCDU of 3.4nm.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Carmen Popescu, Greg O'Callaghan, Alexandra McClelland, Catherine Storey, John Roth, Edward A. Jackson, and Alex P. G. Robinson "Recent Improvements in EUV lithography using multi-trigger resist", Proc. SPIE PC12750, International Conference on Extreme Ultraviolet Lithography 2023, PC1275007 (22 November 2023); https://doi.org/10.1117/12.2687325
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KEYWORDS
Extreme ultraviolet lithography

Photoresist materials

Line width roughness

Lithography

Molecules

Optical lithography

Polymers

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