Parametric analysis of on-chip III-V/SiN quantum well/dot lasers

Emad Alkhazraji; Weng W. Chow; Frédéric Grillot; John E. Bowers; Scott E. Madaras; Michael Gehl; Erik Skogen; Yating Wan

doi:10.1117/12.2692130

12 March 2024 Parametric analysis of on-chip III-V/SiN quantum well/dot lasers

Emad Alkhazraji, Weng W. Chow, Frédéric Grillot, John E. Bowers, Scott E. Madaras, Michael Gehl, Erik Skogen, Yating Wan

Author Affiliations +

Proceedings Volume PC12880, Physics and Simulation of Optoelectronic Devices XXXII; PC128800G (2024) https://doi.org/10.1117/12.2692130
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

A parametric study was conducted on coupled-cavity on-chip lasers to investigate the feasibility of reducing the lasing linewidth. The study showed that the coupled-cavity structure achieved up to 7 orders of magnitude linewidth reduction. Increasing the number of QW/QD layers (or QD density-per-layer) resulted in higher optical power and narrower linewidths. However, in the QW case, increasing the layers reduced efficiency and increased the input-power requirement for locking, while in the QD case, increasing the QD layers/density increased the efficiency and decreased the input-power requirement. The study recommends minimizing the number of QW layers and maximizing the number of QD layers at moderate and low current injection, respectively.

Conference Presentation

Citation Download Citation

Emad Alkhazraji, Weng W. Chow, Frédéric Grillot, John E. Bowers, Scott E. Madaras, Michael Gehl, Erik Skogen, and Yating Wan "Parametric analysis of on-chip III-V/SiN quantum well/dot lasers", Proc. SPIE PC12880, Physics and Simulation of Optoelectronic Devices XXXII, PC128800G (12 March 2024); https://doi.org/10.1117/12.2692130

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