Interlaboratory and NIST terahertz standards comparisons with application to non-contact semiconductor carrier measurements

Edwin J. Heilweil; Hannes Hempel; Timothy J. Magnanelli; Jared Wahlstrand; Steven J. Robey; Daniel M. Harrington; Christine K. McGinn; Christina A. Hacker

doi:10.1117/12.3001151

9 March 2024 Interlaboratory and NIST terahertz standards comparisons with application to non-contact semiconductor carrier measurements

Edwin J. Heilweil, Hannes Hempel, Timothy J. Magnanelli, Jared Wahlstrand, Steven J. Robey, Daniel M. Harrington, Christine K. McGinn, Christina A. Hacker

Author Affiliations +

Proceedings Volume PC12884, Ultrafast Phenomena and Nanophotonics XXVIII; PC128840G (2024) https://doi.org/10.1117/12.3001151
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

A 15-laboratory round-robin inter-comparison of ultrafast Terahertz and Microwave time-domain measurements will be presented. Detailed time-to-frequency domain spectral analyses to extract photo-generated carrier conductivity/mobility of high-mobility Perovskite film samples were examined. Experiments comparing non-contact Terahertz to Hall conductivity measurements conducted at NIST for bulk semiconductors (Float Zone Si, n/p-doped Si, GaAs, ZnTe, GaP, etc.) will be briefly shown. An overview of ultrafast terahertz studies of conducting polymers, 2D monolayer and exciton “multiplication” in multilayer transition metal dichalcogenide films (MoTe2, MoS2) will be given.

Conference Presentation

Citation Download Citation

Edwin J. Heilweil, Hannes Hempel, Timothy J. Magnanelli, Jared Wahlstrand, Steven J. Robey, Daniel M. Harrington, Christine K. McGinn, and Christina A. Hacker "Interlaboratory and NIST terahertz standards comparisons with application to non-contact semiconductor carrier measurements", Proc. SPIE PC12884, Ultrafast Phenomena and Nanophotonics XXVIII, PC128840G (9 March 2024); https://doi.org/10.1117/12.3001151

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