Effects of EUV multilayer roughness on 2D patterning

Luke T. Long; Stuart Sherwin; Ryan Miyakawa; Tom Pistor; Matt Hettermann; Patrick Naulleau

doi:10.1117/12.3012360

10 April 2024 Effects of EUV multilayer roughness on 2D patterning

Luke T. Long, Stuart Sherwin, Ryan Miyakawa, Tom Pistor, Matt Hettermann, Patrick Naulleau

Proceedings Volume PC12953, Optical and EUV Nanolithography XXXVII; PC129530J (2024) https://doi.org/10.1117/12.3012360
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Abstract

In extreme ultraviolet lithography, multilayer roughness effects are a key contributor to mask-induced pattern roughness1. In particular, replicated roughness from the mask substrate results in a spatially dependent phase error that ultimately manifests as aerial image roughness at the wafer. In this paper, we utilize Monte Carlo methods to study the impact of multilayer roughness on the printing of two-dimensional patterns. We focus on the impact of multilayer roughness on both TaN absorber masks as well as attenuated phase shift masks, comparing roughness impact on each architecture at both 0.33 and 0.55 NA EUV lithography. We examine whether the modeled multilayer roughness explains observed patterning phenomena, with a focus on what level of remedy would be required for multilayer roughness effects to become negligible components of the patterning error budget.

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Luke T. Long, Stuart Sherwin, Ryan Miyakawa, Tom Pistor, Matt Hettermann, and Patrick Naulleau "Effects of EUV multilayer roughness on 2D patterning", Proc. SPIE PC12953, Optical and EUV Nanolithography XXXVII, PC129530J (10 April 2024); https://doi.org/10.1117/12.3012360

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KEYWORDS

Extreme ultraviolet

Optical lithography

Extreme ultraviolet lithography

Phase shifts

Attenuation

Lithography

Monte Carlo methods

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