10 June 2024Heterogeneous integration of quantum dot and nonlinear materials on 300mm silicon photonic wafers for communications, sensing, and quantum applications
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Quantum dots (QDs) have emerged as promising quantum light sources due to their ability to generate single photons and their compatibility with well-established semiconductor technologies. Meanwhile, nonlinear photonics utilizing aluminum gallium arsenide (AlGaAs) or indium gallium phosphide (InGaP) on insulator waveguides facilitates the manipulation of photons through quantum frequency conversion (QFC) and spontaneous parametric down-conversion (SPDC). It is of significant interest to integrate QDs and nonlinear materials on large-diameter silicon photonic wafers to build quantum networks leveraging scalable photonics manufacturing.
Jonathan Klamkin
"Heterogeneous integration of quantum dot and nonlinear materials on 300mm silicon photonic wafers for communications, sensing, and quantum applications", Proc. SPIE PC13028, Quantum Information Science, Sensing, and Computation XVI, PC130280H (10 June 2024); https://doi.org/10.1117/12.3023521
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Jonathan Klamkin, "Heterogeneous integration of quantum dot and nonlinear materials on 300mm silicon photonic wafers for communications, sensing, and quantum applications," Proc. SPIE PC13028, Quantum Information Science, Sensing, and Computation XVI, PC130280H (10 June 2024); https://doi.org/10.1117/12.3023521