Ultrasensitive metal-organic cluster resist for patterning of single exposure high numerical aperture extreme ultraviolet lithography applications

Manvendra Chauhan; Kumar Palit; Sumit Choudhary; Satinder K. Sharma; Kenneth E. Gonsalves

doi:10.1117/1.JMM.21.4.044603

27 December 2022 Ultrasensitive metal-organic cluster resist for patterning of single exposure high numerical aperture extreme ultraviolet lithography applications

Manvendra Chauhan, Kumar Palit, Sumit Choudhary, Satinder K. Sharma, Kenneth E. Gonsalves

Author Affiliations +

Journal of Micro/Nanopatterning, Materials, and Metrology, Vol. 21, Issue 4, 044603 (December 2022). https://doi.org/10.1117/1.JMM.21.4.044603

Abstract

Background

An incredible increase in the integration of electronic chips has pushed the semicon industries to endorse high numerical aperture (h-NA ∼ 0.5), extreme-ultraviolet (EUV) lithography (EUVL) (λ ∼ 13.5 nm) at the commercial scale. Induction of h-NA postulates EUV resists that could outperform the resolution, line pattern roughness, and sensitivity (RLS) trade-off for chip fabricators, which is currently extremely limited.

Aim

The development of EUV resist to balance RLS trade-off as well as overcome throughput limitations of h-NA EUV system to facilitate high volume semiconductor manufacturing.

Approach

Here, we developed indium-methacrylic acid-based metal-organic clusters resist for h-NA, EUVL. To examine the h-NA single exposure patterning potential of the resist, prescreening by sub-10 nm next-generation lithography (NGL) tools such as electron beam lithography (EBL), and helium ion beam lithography (HIBL) were conducted as a prelude to EUV exposure.

Results

Dense ∼13 nm, (l/s) patterns at ∼45 and ∼30 μC / cm² were well resolved by EBL and HIBL, on the top this the line edge roughness (LER) was 2.48 ± 0.04 nm, and etch resistance ∼1.98 and ∼0.34 times lower than Si and SiO₂ / Si systems. Also, In-MAA MOCs resist shows ultra-sensitivity of 2.3 mJ / cm² towards h-NA EUVL for patterning up to 26 nm half-pitch line patterns with LER ∼2.36 ± 0.16 nm.

Citation Download Citation

Manvendra Chauhan, Kumar Palit, Sumit Choudhary, Satinder K. Sharma, and Kenneth E. Gonsalves "Ultrasensitive metal-organic cluster resist for patterning of single exposure high numerical aperture extreme ultraviolet lithography applications," Journal of Micro/Nanopatterning, Materials, and Metrology 21(4), 044603 (27 December 2022). https://doi.org/10.1117/1.JMM.21.4.044603

Received: 19 September 2022; Accepted: 28 November 2022; Published: 27 December 2022

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KEYWORDS

Extreme ultraviolet lithography

Electron beam lithography

Extreme ultraviolet

Silicon

Etching

Optical lithography

Thin films

Background

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