X-cut LiNbO3 optoelectronic device passivated by silicon nitride film

Futoshi Yamamoto; Yasuyuki Miyama; Hirotoshi Nagata; Masumi Tamai

doi:10.1117/1.1367257

1 June 2001 X-cut LiNbO3 optoelectronic device passivated by silicon nitride film

Futoshi Yamamoto, Yasuyuki Miyama, Hirotoshi Nagata, Masumi Tamai

Optical Engineering, Vol. 40, Issue 6, (June 2001). https://doi.org/10.1117/1.1367257

Silicon nitride (Si3N4) passivation was attempted on x-cut LiNbO3 10-Gb/s optical integrated modulators. Although silicon nitride films are commonly used to chemically protect semiconductor device surfaces,1 to our knowledge, applicability of the film to rf optoelectronic devices such as high-speed LiNbO3 modulators has not been reported. The purpose of our investigation is to confirm that the silicon nitride passivation films do not degrade the electro-optic (EO) characteristics and bias-drift performance of LiNbO3 modulators.

©(2001) Society of Photo-Optical Instrumentation Engineers (SPIE)

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Futoshi Yamamoto, Yasuyuki Miyama, Hirotoshi Nagata, and Masumi Tamai "X-cut LiNbO3 optoelectronic device passivated by silicon nitride film," Optical Engineering 40(6), (1 June 2001). https://doi.org/10.1117/1.1367257

Published: 1 June 2001

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