Separation of interface and volume absorption in HfO2 single layers

Jiangtao Lu; Xinbin Cheng; Zhanshan Wang; Huasong Liu

doi:10.1117/1.OE.51.12.121814

26 September 2012 Separation of interface and volume absorption in HfO2 single layers

Jiangtao Lu, Xinbin Cheng, Zhanshan Wang, Huasong Liu

Author Affiliations +

Optical Engineering, Vol. 51, Issue 12, 121814 (September 2012). https://doi.org/10.1117/1.OE.51.12.121814

Abstract

Based on the standing-wave theory, a modified method is proposed to separate interface and volume absorption in HfO₂ single layers. HfO₂ single layers with multiple half-wave optical thickness were prepared; in such case, the electric field at air-film and film-substrate interface is equal, and total absorption from both interfaces can be easily expressed by the product of electric field intensity and a simplified total interface absorption coefficient. Ultralow-absorptive substrates were used to eliminate the contribution of substrate absorption. When HfO₂ single layer was irradiated from the coated and uncoated side in the photothermal measurement, two equations were obtained and utilized to separate the interface and volume absorption. The validity of our method was further confirmed using another thickness changing approach. By contrast, irradiation direction changing method is better because only one sample is required.

Citation Download Citation

Jiangtao Lu, Xinbin Cheng, Zhanshan Wang, and Huasong Liu "Separation of interface and volume absorption in HfO2 single layers," Optical Engineering 51(12), 121814 (26 September 2012). https://doi.org/10.1117/1.OE.51.12.121814

Published: 26 September 2012

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