Dr. Rémi Comyn Profile

Dr. Rémi Comyn

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Publications (1)

Proceedings Article | 9 March 2024 Presentation

Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Yvon Cordier, Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Maud Nemoz, Philippe Vennéguès, Benjamin Damilano, Eric Frayssinet, Stéphane Vézian

Proceedings Volume PC12886, PC128860N (2024) https://doi.org/10.1117/12.3007453

KEYWORDS: Transistors, Aluminum gallium nitride, Vacuum, Silicon nitride, Silicon, Oxides, Heterojunctions, Gallium nitride, Field effect transistors, Fabrication

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