Electron Beam Assisted CVD Of Silicon Dioxide And Silicon Nitride Films

K Emery; L. R. Thompson; J J. Rocca; G. J. Collins

doi:10.1117/12.939440

14 June 1984 Electron Beam Assisted CVD Of Silicon Dioxide And Silicon Nitride Films

K Emery, L. R. Thompson, J J. Rocca, G. J. Collins

Proceedings Volume 0459, Laser-Assisted Deposition, Etching, and Doping; (1984) https://doi.org/10.1117/12.939440
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States

Abstract

A glow discharge electron beam has been used to deposit silicon dioxide (Si0₂) and silicon nitride (Si₃N₄) films for microelectronic applications. Electron beam assisted CVD is a new technique in which the reaction volume is defined mainly by the geometry of the electron beam and offers the possibility of uniform deposition over large areas. The Si0₂ films were deposited in silane-nitrous oxide-nitrogen mixtures, and the Si₃N₄ films were deposited in silane-ammonia-nitrogen mixtures. The films were deposited with a 2-4 kV electron beam parallel to the sample, at 0.1-1 Torr pressures, and at substrate temperatures from 50-400°C. The index of refraction, sthoichiometry, pinhole density, etch rate, conformal step coverage, and hydrogen bonding were measured.

Citation Download Citation

K Emery, L. R. Thompson, J J. Rocca, and G. J. Collins "Electron Beam Assisted CVD Of Silicon Dioxide And Silicon Nitride Films", Proc. SPIE 0459, Laser-Assisted Deposition, Etching, and Doping, (14 June 1984); https://doi.org/10.1117/12.939440

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