MeV Implantation Of N-Type Dopants Into GaAs

Phillip E. Thompson; Harry B. Dietrich; Michael Spencer; David C. Ingram

doi:10.1117/12.946465

9 April 1985 MeV Implantation Of N-Type Dopants Into GaAs

Phillip E. Thompson, Harry B. Dietrich, Michael Spencer, David C. Ingram

Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946465
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

Implantation into GaAs of n-type dopants having energies of 1 MeV or greater has been investigated. The resulting carrier profiles have been studied with an electrolytic CV technique and with Hall measurements. It was found that MeV Si implantation maybe used to form well defined n-layers in GaAs. Anneal temperatures of 800°C to 850°C are adequate for activation of fluences of 5x1013/cm² or less for 1 MeV Si. For a fluence of lx1014 Si/cm² an anneal temperature of 900°C must be used to prevent the formation of a surface p-type layer. MeV S implantation was found to form diffuse 2-layers. When 1 MeV Si and 1.25 MeV S were co-implanted, both with a fluence of lx10/cm², an n-layer was formed wila anneal temperatures as low as 800°C. At 900°C, a peak carrier concentration of 2x101°/cm³ was achieved. 6 MeV Si produces a buried n-layer with a carrier concentration maximum at 3.0 μm. Uniform deep implants have been activated having carrier concentrations as low as 2x10 16/cm³ with a mobility of 5500 cm²/V's.

Citation Download Citation

Phillip E. Thompson, Harry B. Dietrich, Michael Spencer, and David C. Ingram "MeV Implantation Of N-Type Dopants Into GaAs", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); https://doi.org/10.1117/12.946465

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