Effect of ion beam etching on the surface roughness of bare and silicon covered beryllium

N. I. Chkhalo; M. S. Mikhaylenko; A. V. Mil'kov; A. E. Pestov; V. N. Polkovnikov; N. N. Salashchenko; I. L. Strulya; M. V. Zorina; S. Yu. Zuev

doi:10.1117/12.2269312

31 May 2017 Effect of ion beam etching on the surface roughness of bare and silicon covered beryllium

N. I. Chkhalo, M. S. Mikhaylenko, A. V. Mil'kov, A. E. Pestov, V. N. Polkovnikov, N. N. Salashchenko, I. L. Strulya, M. V. Zorina, S. Yu. Zuev

Author Affiliations +

Proceedings Volume 10235, EUV and X-ray Optics: Synergy between Laboratory and Space V; 102350M (2017) https://doi.org/10.1117/12.2269312
Event: SPIE Optics + Optoelectronics, 2017, Prague, Czech Republic

Abstract

In the paper is studied the main aspects of using ion-beam etching for finish polishing. It is found that 400 eV is the optimal energy for neon ion etching ensuring slight surface roughness smoothing in the range of incidence angles of ± 40°. The deposition of 200 nm amorphous silicon films onto beryllium and their subsequent etching with the 800 eV argon ions improve the effective surface roughness integrated across the range of the spatial frequencies of 0.025-60 μm^-1, from σ_eff=1.37 nm down to σ_eff=0.29 nm. The effectiveness of the smoothing technology for x-ray applications, confirmed by the results of the study the reflective properties of the Mo/Si mirrors deposited on the substrate. The reflectivity at a wavelength of 13.5 nm increased from 2% for the substrates with the surface roughness of σ_eff=2.3 nm (the roughness value corresponds to the as-prepared bulk Be substrates and is taken from the literature) up to 67.5% after the smoothing technology.

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N. I. Chkhalo, M. S. Mikhaylenko, A. V. Mil'kov, A. E. Pestov, V. N. Polkovnikov, N. N. Salashchenko, I. L. Strulya, M. V. Zorina, and S. Yu. Zuev "Effect of ion beam etching on the surface roughness of bare and silicon covered beryllium", Proc. SPIE 10235, EUV and X-ray Optics: Synergy between Laboratory and Space V, 102350M (31 May 2017); https://doi.org/10.1117/12.2269312

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