High power widely tunable optically pumped semiconductor lasers

Yanbo Bai; Zuntu Xu; Eli Weiss; Christian Scholz; Juan Chilla; Andreas Diening

doi:10.1117/12.2513486

4 March 2019 High power widely tunable optically pumped semiconductor lasers

Yanbo Bai, Zuntu Xu, Eli Weiss, Christian Scholz, Juan Chilla, Andreas Diening

Proceedings Volume 10901, Vertical External Cavity Surface Emitting Lasers (VECSELs) IX; 1090104 (2019) https://doi.org/10.1117/12.2513486
Event: SPIE LASE, 2019, San Francisco, California, United States

Abstract

The bandwidth of an optically pumped semiconductor laser (OPS) is determined by the bandwidth of the material gain, the bandwidth of the longitudinal confinement factor (LCF), and the bandwidth of the Distributed Bragg Reflector (DBR). For a typical OPS structure at 1064nm, the bandwidth of the DBR is the largest among them. In this work, we demonstrate a tunable OPS structure with broadened material gain and LCF, so that the bandwidth of the OPS is close to the bandwidth of the DBR. The laser outputs more than 2W, tunable in a wavelength range of 1035 – 1100nm.

Citation Download Citation

Yanbo Bai, Zuntu Xu, Eli Weiss, Christian Scholz, Juan Chilla, and Andreas Diening "High power widely tunable optically pumped semiconductor lasers", Proc. SPIE 10901, Vertical External Cavity Surface Emitting Lasers (VECSELs) IX, 1090104 (4 March 2019); https://doi.org/10.1117/12.2513486

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