We present recent progress of high power 808nm to 1060 nm laser bar operating at both CW and QCW operation. At CW operation, we demonstrate 50FF4.0 mm 940nm to 1060 nm bar can achieve up to 300W output power at 300A with high TE purity on MCCP package. At QCW operation, the 808nm 80FF1.5 mm bar can achieve 600W output power at both 25oC and 75oC on standard CCP; and the 75FF3.0 mm 940nm and 970nm bar can achieve 1KW at 1KA. We will also present results of our 808nm ~ 970nm QCW bar at ns region up to multi KA drive.
The bandwidth of an optically pumped semiconductor laser (OPS) is determined by the bandwidth of the material gain, the bandwidth of the longitudinal confinement factor (LCF), and the bandwidth of the Distributed Bragg Reflector (DBR). For a typical OPS structure at 1064nm, the bandwidth of the DBR is the largest among them. In this work, we demonstrate a tunable OPS structure with broadened material gain and LCF, so that the bandwidth of the OPS is close to the bandwidth of the DBR. The laser outputs more than 2W, tunable in a wavelength range of 1035 – 1100nm.
The most technologically mature optically pumped semiconductor lasers (OPSL) are based on InGaAs quantum wells (QW) for emission in the 900-1200 nm range. The low wavelength boundary is set by both the bandgap of InGaAs and the most common pump wavelength of 808 nm. To extend the wavelength coverage into 700 – 900 nm, a different QW system and a different pump wavelength are needed. In this work, we present the progress and result in the development of AlGaAs-based OPSL.
We present recent development of single lateral mode 1050 nm laser bars. The devices are based on an InGaAs/AlGaAs single quantum well and an asymmetric large optical cavity waveguide structure. By optimizing the AlGaAs composition, doping profiles, and QW thickness, the low internal loss of 0.5 cm-1 and high internal quantum efficiency of 98% are obtained. A standard bar (10% fill factor; 4mm cavity length) reaches 72% peak electro-optical efficiency and 1.0 W/A slope efficiency at 25°C. To achieve high single lateral mode power, the current confinement and optical loss profile in lateral direction are carefully designed and optimized to suppress higher order lateral modes. We demonstrate 1.5W single lateral mode power per emitter from a 19-emitter 10mm bar at 25°C. High electro-optical efficiency are also demonstrated at 25°C from two separate full-bar geometries on conduction cooled packaging: 20 W with <50% electro-optical efficiency from a 19-emitter bar and 50 W with <45% electro-optical efficiency from a 50-emitter bar.
Optically pumped semiconductor lasers (OPSL) offer the advantage of excellent beam quality, wavelength agility, and high power scaling capability. In this talk we will present our recent progress of high-power, 920nm OPSLs frequency doubled to 460nm for lightshow applications. Fundamental challenges and mitigations are revealed through electrical, optical, thermal, and mechanical modeling. Results also include beam quality enhancement in addressing the competition from diode lasers.
A novel, 9XX nm fiber-coupled module using arrays of highly reliable laser diode bars has been developed. The module is capable of multi-kW output power in a beam parameter product of 80 mm-mrad. The module incorporates a hard-soldered, isolated stack package compatible with tap-water cooling. Using extensive, accelerated multi-cell life-testing, with more than ten million device hours of test, we have demonstrated a MTTF for emitters of >500,000 hrs. In addition we have qualified the module in hard-pulse on-off cycling and stringent environmental tests. Finally we have demonstrated promising results for a next generation 9xx nm chip design currently in applications and qualification testing
We report on our progress developing long wavelength high power laser diodes based on the InGaAsP/InP alloy system emitting in the range from 1400 to 2010 nm. Output power levels exceeding 50 Watts CW and 40% conversion efficiency were obtained at 1470 nm wavelength from 20% fill factor (FF) bars with 2 mm cavity length mounted on water cooled plates. Using these stackable plates we built a water cooled stack with 8 bars, successfully demonstrating 400 W at 1470 nm with good reliability. In all cases the maximum conversion efficiency was greater than 40% and the maximum power achievable was limited by thermal rollover. For lasers emitting in the range from 1930 to 2010 nm we achieved output power levels over 15 W and 20 % conversion efficiency from 20% FF bars with 2 mm cavity length on a conductively cooled platform. Life testing of the 1470 nm lasers bars over 14,000 hours under constant current mode has shown no significant degradation.
KEYWORDS: Semiconductor lasers, Waveguides, High power lasers, Near field optics, Continuous wave operation, Cladding, Reliability, Aluminum, Photonics, Doping
High power, high brightness, single emitter laser diodes with different apertures from 5 μm to 1000 μm are
reported on, in the wavelength range from 780 nm to 1060 nm. On going progress at Axcel Photonics for both single-mode
and multi-mode laser diodes will be presented. These diode lasers show high slope efficiency, low threshold
current and low voltage, etc. Laser diodes with different emitting apertures at 5μm, 50 μm, 90 μm, 200 μm, 400 μm,
1000 μm, are reported on and discussed in detail. The reliability data for different sized emitters is presented. These
results demonstrated that Axcel's technologies enable laser diodes made from Al based material grown on GaAs
substrates, which can reliably operate at high brightness and high power in the near infrared-wavelength range under
wide range of emitting apertures. These laser diodes are suitable for a wide variety of applications including medical,
material processing, graphics, pumping solid-state lasers and fiber lasers.
KEYWORDS: Lab on a chip, Semiconductor lasers, Near field, Near field optics, Reliability, Fiber lasers, Laser damage threshold, High power lasers, Waveguides, Quantum wells
High brightness, high power, and highly reliable 915nm InAlGaAs laser diodes with optimized design are reported in
this paper. The laser diodes exhibit excellent performance, such as, high slope efficiency, low threshold current, low
voltage, etc., which make them suitable for high brightness operation. The aging test data shows no failures during aging
test and more than 220,000 hours estimated lifetime for 90um emitter laser diodes at 8W CW operation. The aging test
with the same emitter size at higher stress conditions showed sudden failure that corresponds to catastrophic optical
damage (COD) on the facet. A novel large optical cavity (LOC) epi-structure with flat-top near field intensity
distribution was developed. The maximum output power is up to 23W under CW testing condition at 25 °C, which is
highest level achieved so far. The output power is limited by thermal roll over and there is no COD occurring. This data
shows Axcel's technologies can further increase the brightness to over 110mW per micron for 915nm laser diodes. This
type of laser diodes is essential for pumping fiber lasers to replace CO2 lasers for industry applications.
High power laser diodes and diode arrays emitting at the wavelength of 808nm are widely used for pumping
neodymium (Nd+) doped solid state lasers and fiber lasers, medical surgery, dental treatment and material processing. In
general, the power is limited by catastrophic optical mirror damage (COMD) and heat dissipation. In this paper we
demonstrate 29W CW output power at 808 nm from a 400 &mgr;m single emitter with 2mm cavity length. The device
thermally rolls over due to the excess heat. The L-I curve rolls over at 29.5W, the laser is still alive, and we can repeat
the test again and again without catastrophic optical mirror-damage (COMD). The device consists of an
InAlGaAs/AlGaAs/GaAs, optimized special graded-index separated-confinement heterostructure (GRINSCH) broad
waveguide (BW), single quantum well (SQW) and barriers between waveguide and cladding layers. A weak temperature
dependence characteristic, which is desirable for high power and reliable operation, is obtained from these devices.
High power, 1060 nm, InGaAs/GaAs/AlGaAs graded-index, separate-confinement (GRINSCH), strained single quantum-well (SQW), single mode (SM) laser diodes grown by Metal-Organic Chemical-Vapor Deposition (MOCVD) are reported. The high quality quantum well with high strain, which is the key issue to make high performance 1060 nm laser diode, was obtained by optimizing growth conditions. For realizing SM lasers and modules, the ridge-waveguide lasers with 5 um width and 1500 μm cavity length are successfully fabricated and mounted epitaxial-side up onto AlN submounts using eutectic Au80Sn20 solder to allow easy access to the emission region for fiber coupling and to minimize the effects of die bonding stress on the ridge. These devices exhibit threshold current of less than 30 mA, slope efficiency of up to 1.0 W/A and high kink-free power of 500 mW at 25°C. The devices that were subjected to long-term aging test at 85°C, operating at 300 mW, first show very good reliability. The coupled module with more than 70% fiber coupling efficiency and more than 200 mW output power from a single mode fiber or polarization maintained (PM) fiber in 14-pin butterfly case is demonstrated.
Reliable, high-power, single-mode, GaAlAs/GaAs, laser-diodes in the spectral region of 780 - 900 nm have been designed with procedures developed for telecom-grade, 980 nm, InGaAs/GaAlAs/GaAs pump diodes. Fifteen 808 nm, single-mode laser-diodes, mounted epitaxial-side up onto AlN submounts with eutectic Au80Sn20 solder, have been operated reliably for 3500 hours at 150 mW.
KEYWORDS: Semiconductor lasers, Cladding, Near field optics, Waveguides, Laser damage threshold, Structural design, Absorption, Reliability, Free space optics, Near field
We present a single-mode, 808 nm, AlInGaAs/AlGaAs/GaAs, strained, quantum-well laser with a record low, vertical divergence-angle of 12 degrees and high slope-efficiency of 1.0 W/A. Epitaxial-up mounted
devices have operated with no measurable degradation at 150 mW, 50°C for 3500 hours.
KEYWORDS: Quantum wells, Waveguides, Near field optics, Doping, Cladding, High power lasers, Metalorganic chemical vapor deposition, Semiconductor lasers, Absorption, Carbon
We report results on single-mode, InAlGaAs/AlGaAs/GaAs, 915 nm, lser-diodes operating reliably at 300 mW. The graded-index, separate-confinement, strained, single quantum-well structure was grown by metal-organic chemical-vapor deposition. Carbon, rather than zinc, was used as the p-doping srouce to reduce internal loss and potential reliability issues due to the thermal diffusion of zinc. A threshold current density of 133 A/cm2, internal loss of 2.0 cm-1 and internal quatnum efficiency of 93% were achieved. FOr 1500 μm long ridge waveguide lasers, a record single-mode output-power of 500mW was obtained for devices mounted epitaxial-side up onto AlN submounts using eutectic Au80Sn20 solder. Ten burned-in devices have now been aged at a constant current of 450 mA at 85°C for more than 1500 hours wihtout measurable degradation.
This study examines catastrophic optical damage in failed, single-mode, 980 nm, InGaAs/GaAlAs/GaAs, ridge wave-guide laser diodes. Analysis techniques were selected for their simplicity to provide quick evaluation of material and device quality. The analysis techniques are chemical etching, optical microscopy, infrared microscopy, and scanning electron microscopy.
The long-term reliability of high-power, single-mode, 980 nm, InGaAs/GaAlAs/GaAs, laser diodes is reported. We have performed constant-current aging at at 85°C for three operating currents, 450 mA (~300 mW), 550 mA (~350 mW) and 700 mA (~420 mW). The data for 450 mA aging indicate a total failure rate of less than 250 FITs at a confidence level of 60%. For 550 mA and 700 mA operating currents, no degradation in laser performance within the 5% measurement accuracy of our test equipment have been observed during the first thousand hours of testing.
KEYWORDS: Waveguides, Semiconductor lasers, Near field optics, High power lasers, Absorption, Single mode fibers, Diodes, Aluminum, Thermal effects, Cladding
A ridge-waveguide, InGaAs/GaAlAs/GaAs, 980 nm, pump laser-diode emitting more than 600 mW of kink-free power and a FWHM divergence angle less than 22 degrees using an asymmetric-waveguide structure is presented. No catastrophic optical-damage was observed on p-up mounted devices up to a quasi-CW output power of 2 Watts where the power was limited by thermal effects.
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