Paper
26 October 1989 Chemically Vapor Deposited Silicon Carbide (SiC) For Optical Applications
Michael A. Pickering, Raymond L. Taylor, Joseph T. Keeley, George A. Graves
Author Affiliations +
Abstract
Important physical, optical, thermal, and mechanical properties of cubic (β) silicon carbide produced via a bulk chemical vapor deposition (CVD) process, developed at CVD Incorporated, are presented in this paper. The material's properties make it an ideal candidate material for optical components for LIDAR mirrors, solar collectors and concentrators, and astronomical telescopes. The CVD process has been scaled to produce large monolithic pieces of bulk SiC, i.e. disks up to 60-cm (24-in) diameter and plates up to 76-cm (30-in) long by 46-cm (18-in) wide with thickness up to 13 mm (0.5 in).
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael A. Pickering, Raymond L. Taylor, Joseph T. Keeley, and George A. Graves "Chemically Vapor Deposited Silicon Carbide (SiC) For Optical Applications", Proc. SPIE 1118, Space Optical Materials and Space Qualification of Optics, (26 October 1989); https://doi.org/10.1117/12.960942
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Cited by 7 scholarly publications.
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KEYWORDS
Chemical vapor deposition

Silicon carbide

Astronomical imaging

Polishing

Surface finishing

Reflectivity

Thermography

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