Presentation + Paper
23 March 2020 Improvement of EUV Si hardmask performance through wet chemistry functionalization
Yichen Liang, Andrea M. Chacko, Samantha Oelklaus, Ethan Lowrey, Veerle Van Driessche, Ivan R. Sedlacek, Ming Luo, Stephen M. Grannemann, Douglas J. Guerrero
Author Affiliations +
Abstract
In EUV lithography, spin-on silicon hardmasks have been widely used not only as etch transfer layers, but also as assist layers to enhance the lithographic performance of resist. In this study, we demonstrate a novel approach to functionalize spin-on silicon hardmasks by hybridizing them with functional groups through a sol-gel approach. By varying the concentration and type of the functional groups, the structure and property of the hardmasks can be tuned effectively, especially in the aspects of surface energy, elemental composition, and hardness. The lithographic performance of the functionalized hardmasks was evaluated using NXE3300 EUV exposure system to print line-space features with a targeted CD = 16 nm half pitch. Evidenced by the results, when the functionalized hardmasks were used as underlayers, the resist exhibits large processing window with the printable CD ranging from 11.9 to 19.7 nm and a biased 3-sigma line width roughness = 3.73 nm. In contrast, on a non-functionalized spin-on hardmask, no feature can be printed. Finally, the CF4 and O2 plasma etch rates of the hardmasks were tested to evaluate the impact of functionalization on their etch-selectivity.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yichen Liang, Andrea M. Chacko, Samantha Oelklaus, Ethan Lowrey, Veerle Van Driessche, Ivan R. Sedlacek, Ming Luo, Stephen M. Grannemann, and Douglas J. Guerrero "Improvement of EUV Si hardmask performance through wet chemistry functionalization", Proc. SPIE 11326, Advances in Patterning Materials and Processes XXXVII, 1132614 (23 March 2020); https://doi.org/10.1117/12.2551671
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Cited by 1 patent.
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KEYWORDS
Lithography

Silicon

Extreme ultraviolet lithography

Line width roughness

Polymers

Plasma etching

Photoresist materials

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