Sn doping of [beta]-Ga2O3 grown by plasma-assisted molecular beam epitaxy

Akhil Mauze; Takeki Itoh; Yuewei Zhang; James S Speck

doi:10.1117/12.2593236

5 March 2021 Sn doping of β-Ga₂O₃ grown by plasma-assisted molecular beam epitaxy

Akhil Mauze, Takeki Itoh, Yuewei Zhang, James S Speck

Proceedings Volume 11687, Oxide-based Materials and Devices XII; 116870I (2021) https://doi.org/10.1117/12.2593236
Event: SPIE OPTO, 2021, Online Only

Abstract

Sn doping of β-Ga2O3 grown by conventional plasma-assisted molecular beam epitaxy (PAMBE) and via metal oxide catalyzed epitaxy (MOCATAXY) using a supplied indium flux during MBE growth was investigated. Sn doping of (010) β-Ga2O3 via MOCATAXY allowed for sharper doping profiles as well as a wider range of donor concentrations from 4 x 10^16 cm-3 to 2 x 10^19 cm-3 with a maximum Hall mobility of 136 cm2/Vs and a Sn donor level of 77 meV below the conduction band. Expansion of MOCATAXY to (001) β-Ga2O3 also showed improved Hall mobility, growth rates, and smoother films in this orientation.

Conference Presentation

Citation Download Citation

Akhil Mauze, Takeki Itoh, Yuewei Zhang, and James S Speck "Sn doping of β-Ga₂O₃ grown by plasma-assisted molecular beam epitaxy", Proc. SPIE 11687, Oxide-based Materials and Devices XII, 116870I (5 March 2021); https://doi.org/10.1117/12.2593236

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