High growth-rate MOCVD homoepitaxial [beta]-Ga2O3 films and MOSFETs for power electronics applications

Marko J. Tadjer; Fikadu Alema; Andrei Osinsky; Michael Mastro; Neeraj Nepal; Jeffrey Woodward; Rachael Myers-Ward; Evan Glaser; Jaime Freitas; Alan Jacobs; James Gallagher; Alyssa Mock; Daniel Pennachio; Jenifer Hajzus; Mona Ebrish; Travis Anderson; Karl Hobart; Jennifer Hite; Charles Eddy Jr.

doi:10.1117/12.2588944

5 March 2021 High growth-rate MOCVD homoepitaxial β-Ga₂O₃ films and MOSFETs for power electronics applications

Marko J. Tadjer, Fikadu Alema, Andrei Osinsky, Michael Mastro, Neeraj Nepal, Jeffrey Woodward, Rachael Myers-Ward, Evan Glaser, Jaime Freitas, Alan Jacobs, James Gallagher, Alyssa Mock, Daniel Pennachio, Jenifer Hajzus, Mona Ebrish, Travis Anderson, Karl Hobart, Jennifer Hite, Charles Eddy Jr.

Author Affiliations +

Proceedings Volume 11687, Oxide-based Materials and Devices XII; 116870S (2021) https://doi.org/10.1117/12.2588944
Event: SPIE OPTO, 2021, Online Only

Abstract

Ga2O3 is the only ultra-wide bandgap semiconductor with melt-growth substrate technology similar to that of Si, heterostructure device technology similar to that of the III-Nitride family, and high growth rate (GR) epitaxial technologies such as MOCVD and HVPE to support the development of ultra-high-breakdown voltage devices competitive with SiC technology. We have demonstrated for the first time a β-Ga2O3 MOSFET grown by high-GR MOCVD (Agnitron Technology’s Agilis 100 reactor) with record high mobility of 170 cm2/Vs, despite increased carrier scattering rate in the doped channel, facilitated by a significant improvement in epilayer quality. The high GR demonstrated via this method paves the road for demonstration of high breakdown voltage devices on a thick Ga2O3 buffer layer. [1] M.J. Tadjer et al., J. Phys. D: Appl. Phys. 54 (2021) 034005.

Conference Presentation

Citation Download Citation

Marko J. Tadjer, Fikadu Alema, Andrei Osinsky, Michael Mastro, Neeraj Nepal, Jeffrey Woodward, Rachael Myers-Ward, Evan Glaser, Jaime Freitas, Alan Jacobs, James Gallagher, Alyssa Mock, Daniel Pennachio, Jenifer Hajzus, Mona Ebrish, Travis Anderson, Karl Hobart, Jennifer Hite, and Charles Eddy Jr. "High growth-rate MOCVD homoepitaxial β-Ga₂O₃ films and MOSFETs for power electronics applications", Proc. SPIE 11687, Oxide-based Materials and Devices XII, 116870S (5 March 2021); https://doi.org/10.1117/12.2588944

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
PRESENTATION

WATCH
PRESENTATION SAVE TO MY LIBRARY

GET CITATION

KEYWORDS

Metalorganic chemical vapor deposition

Field effect transistors

Electronics

Atmospheric plasma

Scattering

Silicon carbide

Transistors

Show All Keywords

Keywords/Phrases

Search In:

Publication Years