The silicon vacancy center in 4H-SiC is an optically active defect with spin transitions that can be initialized and read out at room temperature. The sensitivities of room temperature magnetometers using these defects have been limited by decoherence due to a magnetically noisy host crystal. In this work we demonstrate coherence time improvements of silicon vacancy ensembles via isotopic purification of SiC and through a novel choice of basis in the S=3/2 ground state of the defect. Using this, we realize a broadband room temperature magnetometer with a 4nT/rt(hz) sensitivity and a 200pT/rt(Hz) shot noise limited sensitivity.
Ga2O3 is the only ultra-wide bandgap semiconductor with melt-growth substrate technology similar to that of Si, heterostructure device technology similar to that of the III-Nitride family, and high growth rate (GR) epitaxial technologies such as MOCVD and HVPE to support the development of ultra-high-breakdown voltage devices competitive with SiC technology. We report a Ga2O3 transistor device based on a high-GR MOCVD technology (Agnitron Technology’s Agilis 100 reactor). We have demonstrated for the first time a β-Ga2O3 MOSFET grown by high-GR MOCVD resulting in significantly improved epilayer quality. The high GR demonstrated via this method paves the road for demonstration of high breakdown voltage devices on a thick Ga2O3 buffer layer.
Ga2O3 is the only ultra-wide bandgap semiconductor with melt-growth substrate technology similar to that of Si, heterostructure device technology similar to that of the III-Nitride family, and high growth rate (GR) epitaxial technologies such as MOCVD and HVPE to support the development of ultra-high-breakdown voltage devices competitive with SiC technology. We have demonstrated for the first time a β-Ga2O3 MOSFET grown by high-GR MOCVD (Agnitron Technology’s Agilis 100 reactor) with record high mobility of 170 cm2/Vs, despite increased carrier scattering rate in the doped channel, facilitated by a significant improvement in epilayer quality. The high GR demonstrated via this method paves the road for demonstration of high breakdown voltage devices on a thick Ga2O3 buffer layer. [1] M.J. Tadjer et al., J. Phys. D: Appl. Phys. 54 (2021) 034005.
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