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12 April 2021 NbN-on-Si superconducting nanowire single photon detectors: effect of a sputtered AlN buffer layer
Raouia Rhazi, Houssaine Machhadani, Catherine Bougerol, Stéphane Lequien, Guillaume Rodriguez, Richard Souil, Jean-Luc Thomassin, Nicolas Mollard, Eva Monroy, Ségolène Olivier, Jean-Michel Gerard
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Proceedings Volume 11721, Advanced Photon Counting Techniques XV; 117210G (2021) https://doi.org/10.1117/12.2587853
Event: SPIE Defense + Commercial Sensing, 2021, Online Only
Abstract
Superconducting nanowire single photon detectors stand today as the best technology, due to their near-unity detection efficiency, low dark count rates, and low timing jitter. In this work, we demonstrate the improvement of the superconducting properties of NbN thin films on 8” silicon-on-insulator wafers by using an ultra-thin (10-15 nm) sputtered AlN buffer layer. The higher crystalline quality of NbN, leads to an increase of the superconducting critical temperature up to 10 K for 9-nm-thick NbN films. The material was validated for single photon detection using a fiber-coupled vertical SNSPD with half-cavity architecture. This results opens the way for the development of CMOS compatible waveguide-integrated detectors. The implementation of such guided devices is a keystone for the development of a fully integrated quantum photonics platform able to generate, manipulate and detect a large number of photonic qubits for secure communications and quantum computing applications.
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Raouia Rhazi, Houssaine Machhadani, Catherine Bougerol, Stéphane Lequien, Guillaume Rodriguez, Richard Souil, Jean-Luc Thomassin, Nicolas Mollard, Eva Monroy, Ségolène Olivier, and Jean-Michel Gerard "NbN-on-Si superconducting nanowire single photon detectors: effect of a sputtered AlN buffer layer", Proc. SPIE 11721, Advanced Photon Counting Techniques XV, 117210G (12 April 2021); https://doi.org/10.1117/12.2587853
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KEYWORDS
Aluminum nitride
Nanowires
Single photon detectors
Superconductors
Crystals
Semiconducting wafers
Single photon
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