Paper
15 February 1990 Cluster Processing For 16-Mb DRAM Production
Albert Bergendahi, David Horak
Author Affiliations +
Proceedings Volume 1188, Multichamber and In-Situ Processing of Electronic Materials; (1990) https://doi.org/10.1117/12.963942
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
Multichamber and in-situ technology are used to meet the challenge of manufacturing 16-Mb cost/per-formance DRAMs. The 16-Mb fabrication process is more complex than earlier 1-Mb and 4-Mb chips. Clustering of sequential process steps effectively compensates for both manufacturing complexity and foreign-material (FM) related defect densities. The development time of clusters combining new processes and equipment in multiple automated steps is nearly as long as the product development cycle. This necessitates codevelopment of manufacturing process clusters with technology integration while addressing the factors influencing FM defect generation, processing turnaround time (TAT), manufacturing costs, yield and array cell and support device designs. The advantages of multichamber and in situ processing have resulted in their application throughout the entire 16-Mb DRAM process as appropriate equipment becomes available.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Albert Bergendahi and David Horak "Cluster Processing For 16-Mb DRAM Production", Proc. SPIE 1188, Multichamber and In-Situ Processing of Electronic Materials, (15 February 1990); https://doi.org/10.1117/12.963942
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Cited by 8 scholarly publications.
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KEYWORDS
Etching

Semiconducting wafers

Manufacturing

Oxides

Dielectrics

Fermium

Frequency modulation

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