Micro-electroluminescence and micro-photoluminescence study on GaN-based laser diode aging

Lukas Uhlig; Conny Becht; Erik Freier; Ji Hye Kang; Veit Hoffmann; Christoph Stölmacker; Sven Einfeldt; Ulrich T. Schwarz

doi:10.1117/12.2609394

5 March 2022 Micro-electroluminescence and micro-photoluminescence study on GaN-based laser diode aging

Lukas Uhlig, Conny Becht, Erik Freier, Ji Hye Kang, Veit Hoffmann, Christoph Stölmacker, Sven Einfeldt, Ulrich T. Schwarz

Author Affiliations +

Proceedings Volume 12001, Gallium Nitride Materials and Devices XVII; 1200106 (2022) https://doi.org/10.1117/12.2609394
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

Degradation of GaN-based laser diodes after some time of operation appears usually as raised threshold current, lower slope efficiency, or increased voltage. We investigate stressed and non-stressed laser diodes using micro-electroluminescence (μEL) and micro-photoluminescence (μPL). In μEL, the stressed device exhibits darker regions, which are correlated with a red-shifted emission. Both observations indicate a lower carrier density in these darker areas. Our μPL measurements do not suggest a corresponding increased defect density in these regions. This study shows inhomogeneous pumping of the active region that can be explained by current path formation from non-uniform hydrogen distribution. Additionally a background of increased nonradiative recombination is found in the stressed device, which is unrelated to the conductivity degradation.

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Lukas Uhlig, Conny Becht, Erik Freier, Ji Hye Kang, Veit Hoffmann, Christoph Stölmacker, Sven Einfeldt, and Ulrich T. Schwarz "Micro-electroluminescence and micro-photoluminescence study on GaN-based laser diode aging", Proc. SPIE 12001, Gallium Nitride Materials and Devices XVII, 1200106 (5 March 2022); https://doi.org/10.1117/12.2609394

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