Poster + Presentation + Paper
5 March 2022 Nano-diffractive elements in BSI pixel CMOS image sensors: optical design and process integration co-optimization with pixel scaling
Author Affiliations +
Conference Poster
Abstract
Next-generation BSI CMOS Imager Sensors are strongly driven by novel applications in depth sensing, mainly operating in the NIR (940nm) spectrum. As a result, the need for higher pixel sensitivity while shrinking pixel pitch is more present than ever. In this work, we present a new technology platform based on ad-hoc nano diffractor geometries, integrated in the Back Side of BSI CIS that allow to drastically improve the QE of the sensor for pitches varying from 10 μm down to 2.2 μm, co-optimized for both optical and electronic pixel performance.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Barlas, A. Crocherie, F. Bardonnet, Q. Abadie, E. Sungauer, M. Vignetti, B. Mamdy, I. Nicholson, P. G. D'Aillon, A. R. Bianchi, G. Mugny, D. Golanski, F. Domengie , P. Besson, E. Prevost, L. Parmigiani, J. Arnaud, H. Wehbe-Alause, A. Tournier, O. Noblanc, and K. Rochereau "Nano-diffractive elements in BSI pixel CMOS image sensors: optical design and process integration co-optimization with pixel scaling", Proc. SPIE 12004, Integrated Optics: Devices, Materials, and Technologies XXVI, 120040V (5 March 2022); https://doi.org/10.1117/12.2609360
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KEYWORDS
Quantum efficiency

Silicon

Photodiodes

Finite-difference time-domain method

Optical design

Near infrared

Image sensors

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