NIR-enhanced image sensor using multiple epitaxial layers

Bart Dierickx; Jan Bogaerts

doi:10.1117/12.525726

7 June 2004 NIR-enhanced image sensor using multiple epitaxial layers

Bart Dierickx, Jan Bogaerts

Proceedings Volume 5301, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications V; (2004) https://doi.org/10.1117/12.525726
Event: Electronic Imaging 2004, 2004, San Jose, California, United States

Abstract

We present the performance characteristics of a CMOS image sensor, manufactured on wafers with a specially designed multiple epitaxial layer. At the homo-junction between two consecutive epitaxial layers a small potential drop or electric field represents a barrier for electrons diffusing towards the back of the wafer. The multiple epitaxial layer stack results thus in a net drive or confinement of photo-charges towards the surface. As a result there is anisotropical diffusion of charge that are generated deep in the Silicon, e.g. by near infrared (NIR) or X-ray radiation. The spectral response is an order of magnitude higher for than for the same image sensor on "regular" wafers. The anisotropical diffusion results in a limited MTF degradation compared to wafers with a single thick epitaxial layer.

Citation Download Citation

Bart Dierickx and Jan Bogaerts "NIR-enhanced image sensor using multiple epitaxial layers", Proc. SPIE 5301, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications V, (7 June 2004); https://doi.org/10.1117/12.525726

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