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This paper presents the current state of the art in CMOS Active Pixel Sensors (APS) for space applications at Fillfactory and also highlights some commercial and industrial development that can be of interest for the space community.
There are two main advantages with CMOS sensors: First a hyperspectral image consists of spectral lines with a large difference in intensity; in a frame transfer CCD the faint spectral lines have to be transferred through the part of the imager illuminated by intense lines. This can lead to cross-talk and whilst this problem can be reduced by the use of split frame transfer and faster line rates CMOS sensors do not require a frame transfer and hence inherently will not suffer from this problem. Second, with a CMOS sensor the intense spectral lines can be read multiple times within a frame to give a significant increase in dynamic range.
We will describe the design, and initial test of a CMOS sensor for use in hyperspectral applications. This device has been designed to give as high a dynamic range as possible with minimum cross-talk. The sensor has been manufactured on high resistivity epitaxial silicon wafers and is be back-thinned and left relatively thick in order to obtain the maximum quantum efficiency across the entire spectral range
Two generations of the CMOS Imager are planned: a) a smaller ‘pioneering’ device of ⪆ 800x800 pixels capable of meeting first light needs of the E-ELT. The NGSD, the topic of this paper, is the first iteration of this device; b) the larger full sized device called LGSD. The NGSD has come out of production, it has been thinned to 12μm, backside processed and packaged in a custom 370pin Ceramic PGA (Pin Grid Array). Results of comprehensive tests performed both at e2v and ESO are presented that validate the choice of CMOS Imager as the correct technology for the E-ELT Large Visible WFS Detector. These results along with plans for a second iteration to improve two issues of hot pixels and cross-talk are presented.
The course covers many basic aspects of CMOS image sensors, starting at device physics and basic laws of light sensitivity and noise, other image sensor technologies, to CMOS pixel and array architectures. Emphasis lies on circuit principles, noise sources, how noise enters the sensor's signal, and technological and optical limits on the optical performance.
This course covers many aspects of CMOS image sensors. Starting with device physics and basic laws of light sensitivity and noise, moving to other image sensor technologies, the course describes CMOS pixel and array architectures. Emphasis is on circuit principles, noise sources, how noise enters the sensor's signal, and technological and optical limits on the optical performance.
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