Investigation of deep level defects in n-type GaAsBi

Manuel Fregolent; Matteo Buffolo; Carlo De Santi; Sho Hasegawa; Junta Matsumura; Hiroyuki Nishinaka; Masahiro Yoshimoto; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini

doi:10.1117/12.2607597

3 March 2022 Investigation of deep level defects in n-type GaAsBi

Manuel Fregolent, Matteo Buffolo, Carlo De Santi, Sho Hasegawa, Junta Matsumura, Hiroyuki Nishinaka, Masahiro Yoshimoto, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Author Affiliations +

Proceedings Volume 12021, Novel In-Plane Semiconductor Lasers XXI; 1202105 (2022) https://doi.org/10.1117/12.2607597
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

Dilute bismides are a promising class of semiconductors that find applications in mid-infrared optoelectronic devices, especially lasers, photodetectors, and heterojunction solar cells owing to the tenability of the bandgap, the low temperature dependence of their physical properties, and the low Auger recombination coefficient. In this paper we investigate on the defects and deep levels in n-type GaAs1-xBix (x = 1.2 %) Schottky barrier diodes grown by low-temperature molecular beam epitaxy (MBE). Original results obtained by means of capacitance deep level transient spectroscopy (C-DLTS) indicate that: (a) only four majority and two minority carrier traps with concentration below 10¹⁴ cm^-3can be detected in the probed regions and (b) the concentration of the defects is weakly position-dependent, thus indicating that MBE is an effective growth technique to control defect formation. The analysis of the carrier capture kinetics of the dominant electron and hole traps show that (c) they are associated to a dislocation and a point defect with capture barrier of 0.48 eV, respectively. Finally, by comparing the DLTS signatures of the detected defects, we proved (d) that only a deep level is possibly associated to the presence of the bismuth, while the others were already found in pure GaAs.

Conference Presentation

Citation Download Citation

Manuel Fregolent, Matteo Buffolo, Carlo De Santi, Sho Hasegawa, Junta Matsumura, Hiroyuki Nishinaka, Masahiro Yoshimoto, Gaudenzio Meneghesso, Enrico Zanoni, and Matteo Meneghini "Investigation of deep level defects in n-type GaAsBi", Proc. SPIE 12021, Novel In-Plane Semiconductor Lasers XXI, 1202105 (3 March 2022); https://doi.org/10.1117/12.2607597

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available