Theoretical analyses of physical characteristics of a silicon wafer using laser beams with different pulse widths

Ying Zhang; Shiheng Zhang; Chaoqun Ma; Qing Luo; Yunru Fan; Haoyu Li; Juhong Han; Jiao Yang; Xiaoxu Liu; Kepeng Rong; Guofei An; You Wang

doi:10.1117/12.2606543

24 November 2021 Theoretical analyses of physical characteristics of a silicon wafer using laser beams with different pulse widths

Ying Zhang, Shiheng Zhang, Chaoqun Ma, Qing Luo, Yunru Fan, Haoyu Li, Juhong Han, Jiao Yang, Xiaoxu Liu, Kepeng Rong, Guofei An, You Wang

Author Affiliations +

Proceedings Volume 12060, AOPC 2021: Advanced Laser Technology and Applications; 1206013 (2021) https://doi.org/10.1117/12.2606543
Event: Applied Optics and Photonics China 2021, 2021, Beijing, China

Abstract

Silicon is one of the most important semiconductor materials and the basic material in the field of modern microelectronics, and it has been widely used in microelectronics and photovoltaic industries which are closely related to our daily life. Because the traditional silicon wafer cutting technology has some serious problems such as insufficient cutting accuracy, low efficiency, and serious pollution, the laser processing has been paid more and more attention in silicon wafer cutting applications in about recent fifteen years. Therefore, it is extremely important to develop the laser silicon wafer cutting procedure for the improvement of the laser silicon wafer processing technology. An algorithm named as constrained interpolation profile has been invented in computational fluid dynamics. It is actually a semi-Lagrangian method to solve hyperbolic partial differential equations, and has the advantages of the stable results, compact process, and low dissipation, etc. Focused Gaussian laser beams with the same energy of 200 μJ and pulse widths of 100 fs, 20 ps, and 0.5 ns, respectively, were irradiated on the surface of a silicon wafer. The physical properties of density, temperature, and pressure in both time and space domains were obtained by means of the algorithm of constrained interpolation profile in the laser processing simulation. The mechanisms of laser silicon wafer processing were studied in detail by analyzing the changes in physical properties of silicon material. The conclusions of this paper might be useful in the optimization of a silicon wafer cutting process by the use of a pulsed laser.

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Ying Zhang, Shiheng Zhang, Chaoqun Ma, Qing Luo, Yunru Fan, Haoyu Li, Juhong Han, Jiao Yang, Xiaoxu Liu, Kepeng Rong, Guofei An, and You Wang "Theoretical analyses of physical characteristics of a silicon wafer using laser beams with different pulse widths", Proc. SPIE 12060, AOPC 2021: Advanced Laser Technology and Applications, 1206013 (24 November 2021); https://doi.org/10.1117/12.2606543

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KEYWORDS

Silicon

Semiconducting wafers

Semiconductor lasers

Femtosecond phenomena

Laser cutting

Picosecond phenomena

Laser processing

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