New advancements in charge-coupled device technology: subelectron noise and 4096 x 4096 pixel CCDs

James R. Janesick; Tom S. Elliott; Arsham Dingiziam; Richard A. Bredthauer; Charles E. Chandler; James A. Westphal; James E. Gunn

doi:10.1117/12.19452

1 July 1990 New advancements in charge-coupled device technology: subelectron noise and 4096 x 4096 pixel CCDs

James R. Janesick, Tom S. Elliott, Arsham Dingiziam, Richard A. Bredthauer, Charles E. Chandler, James A. Westphal, James E. Gunn

Author Affiliations +

Proceedings Volume 1242, Charge-Coupled Devices and Solid State Optical Sensors; (1990) https://doi.org/10.1117/12.19452
Event: Electronic Imaging: Advanced Devices and Systems, 1990, Santa Clara, CA, United States

Abstract

This paper reports on two new advancements in CCD technology. The first area of development has produced a special purpose CCD designed for ultra low-signal level imaging and spectroscopy applications that require sub-electron read noise floors. A nondestructive output circuit operating near its 1/f noise regime is clocked in a special manner to read a single pixel multiple times. Off-chip electronics average the multiple values, reducing the random noise by the square-root of the number of samples taken. Noise floors below 0.5 electrons rms are reported. The second development involves the design and performance of a high resolution imager of 4096 x 4096 pixels, the largest CCD manufactured in terms of pixel count. The device utilizes a 7.5-micron pixel fabricated with three-level poly-silicon to achieve high yield.

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James R. Janesick, Tom S. Elliott, Arsham Dingiziam, Richard A. Bredthauer, Charles E. Chandler, James A. Westphal, and James E. Gunn "New advancements in charge-coupled device technology: subelectron noise and 4096 x 4096 pixel CCDs", Proc. SPIE 1242, Charge-Coupled Devices and Solid State Optical Sensors, (1 July 1990); https://doi.org/10.1117/12.19452

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