Study of Si-coupled superconducting FETs using microfabrication technologies

Mutsuko Hatano; Toshikazu Nishino; Haruhiro Hasegawa; Fumio Murai; Tokuo Kure; Hideaki Nakane

doi:10.1117/12.20887

1 October 1990 Study of Si-coupled superconducting FETs using microfabrication technologies

Mutsuko Hatano, Toshikazu Nishino, Haruhiro Hasegawa, Fumio Murai, Tokuo Kure, Hideaki Nakane

Proceedings Volume 1287, High Tc Superconductivity: Thin Films and Applications; (1990) https://doi.org/10.1117/12.20887
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

The coherence length in Si is estimated by the measurements of the Nb-Si bilayer superconducting transition temperature and the Nb-Si-Nb weak link superconducting critical current. The coherence length is shown to increase with an increase in the carrier concentration n as a function of n"3 . This result agreed with the numerical result derived from the Seto-Van Duzer's theory. The change in pair potential for the Al-Nb proximity system can be reconstructed by measuring the dependence of differential resistance on incident energy and the bound state levels using lithographic point-contact on Al-Nb bilayer.

Citation Download Citation

Mutsuko Hatano, Toshikazu Nishino, Haruhiro Hasegawa, Fumio Murai, Tokuo Kure, and Hideaki Nakane "Study of Si-coupled superconducting FETs using microfabrication technologies", Proc. SPIE 1287, High Tc Superconductivity: Thin Films and Applications, (1 October 1990); https://doi.org/10.1117/12.20887

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