Advanced characterization of IBAD deposited MgF2, Al2O3, Si, YF3, and Ge thin films in ultra-broadband spectral region of 300-5000 nm

Tatiana Amochkina; Veranika Shandarovich; Daniel Kisela; Michael Trubetskov; Aliaksandr Myslivets

doi:10.1117/12.3023027

24 June 2024 Advanced characterization of IBAD deposited MgF₂, Al₂O₃, Si, YF₃, and Ge thin films in ultra-broadband spectral region of 300-5000 nm

Tatiana Amochkina, Veranika Shandarovich, Daniel Kisela, Michael Trubetskov, Aliaksandr Myslivets

Author Affiliations +

Proceedings Volume 13020, Advances in Optical Thin Films VIII; 130200R (2024) https://doi.org/10.1117/12.3023027
Event: SPIE Optical Systems Design, 2024, Strasbourg, France

Abstract

Multilayer optical coatings operating across broad spectral ranges from visible to mid-infrared play a crucial role in numerous industrial and scientific applications. MgF₂, YF₃, and Al₂O₃ are promising low-index materials within this range, Ge and Si can be harnessed as high-index materials. One of the key prerequisites to producing high-quality optical components is accurate knowledge of optical constants of thin-film materials as well as their environmental properties, which are dependent on deposition technology and process parameters. The present study reports characterization of monolayer samples of Ge, Si, YF₃, Al₂O₃, and MgF₂ on Silicon and Fused Silica substrates produced by e-beam evaporation with ion assistance technology. Deposition of the samples was performed at ORTUS-700 vacuum coater (IPhotonics). Reflectance and transmittance were measured using Photon RT spectrophotometer (Essent Optics) in the range 300-5000 nm. The samples were numerically characterized using advanced algorithms of OTF Studio software; layer optical constants were reliably determined.

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(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Tatiana Amochkina, Veranika Shandarovich, Daniel Kisela, Michael Trubetskov, and Aliaksandr Myslivets "Advanced characterization of IBAD deposited MgF₂, Al₂O₃, Si, YF₃, and Ge thin films in ultra-broadband spectral region of 300-5000 nm", Proc. SPIE 13020, Advances in Optical Thin Films VIII, 130200R (24 June 2024); https://doi.org/10.1117/12.3023027

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