Plasma parameters in microwave-plasma-assisted chemical vapor deposition of diamond

Wayne A. Weimer; Frank M. Cerio; Curtis E. Johnson

doi:10.1117/12.48275

1 December 1991 Plasma parameters in microwave-plasma-assisted chemical vapor deposition of diamond

Wayne A. Weimer, Frank M. Cerio, Curtis E. Johnson

Proceedings Volume 1534, Diamond Optics IV; (1991) https://doi.org/10.1117/12.48275
Event: San Diego, '91, 1991, San Diego, CA, United States

Abstract

The gas phase chemistry in microwave plasma assisted chemical vapor deposition of diamond is similar to the chemistry that occurs during the oxidation of hydrocarbons in flames. Rapid interconversion between CH₄ and C₂H₂ occurs via hydrogen abstraction and addition reactions. CO formation occurs in the presence of oxygen. Electrons sufficiently energetic to dissociated H₂ and CH₄ are present in the plasma. As a result, chemistry normally associated with high temperature (~2000 degree(s)C) hydrocarbon combustion occurs at a relatively low temperature (~800 degree(s)C) in the plasma during diamond deposition.

Citation Download Citation

Wayne A. Weimer, Frank M. Cerio, and Curtis E. Johnson "Plasma parameters in microwave-plasma-assisted chemical vapor deposition of diamond", Proc. SPIE 1534, Diamond Optics IV, (1 December 1991); https://doi.org/10.1117/12.48275

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