Paper
12 August 1992 Bump-bonded back-illuminated CCDs
Michael P. Lesser, Ann Bauer, Lee Ulrickson, David B. Ouellette
Author Affiliations +
Proceedings Volume 1656, High-Resolution Sensors and Hybrid Systems; (1992) https://doi.org/10.1117/12.135929
Event: SPIE/IS&T 1992 Symposium on Electronic Imaging: Science and Technology, 1992, San Jose, CA, United States
Abstract
We have developed a thinning and packaging process which allows the conversion of front-illuminated charge-coupled devices (CCDs) into back illuminated sensors. This process does not depend on any special processing by the manufacturer and can therefore be used with any type of CCD. The process consists of several major steps which include: 1) making a silicon substrate with conductive traces and indium bumps which mate to the CCD wire bonding pads 2) placing indium bumps on the CCD wire bonding pads 3) bump bonding the substrate and CCD together 4) thinning 5)packaging 6) oxidizing the backside surface 7) applying antireflection coatings and 8) backside charging. Using this process with Loral 1200x800 and 3072x1024 CCDs we have produced devices with quantum efficiency in excess of 80 in the near-UV and visible wavelength regions. The surface flatness of these devices has been measured interferometrically to deviate from a plane by less than 1 um rms for the 1200x800 pixel sensors. 2.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael P. Lesser, Ann Bauer, Lee Ulrickson, and David B. Ouellette "Bump-bonded back-illuminated CCDs", Proc. SPIE 1656, High-Resolution Sensors and Hybrid Systems, (12 August 1992); https://doi.org/10.1117/12.135929
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Charge-coupled devices

Oxides

Quantum efficiency

Indium

Low pressure chemical vapor deposition

Silicon

Observatories

RELATED CONTENT

Enhanced silicon sensor capabilities at Teledyne e2v
Proceedings of SPIE (December 13 2020)
Indium-tin-oxide biased-gate technology
Proceedings of SPIE (August 12 1992)
High-density hybrid interconnect technologies
Proceedings of SPIE (September 08 2004)
Improved Uniformity In Thinned Scientific CCDs
Proceedings of SPIE (December 22 1989)
Silicon p-i-n focal plane arrays at Raytheon
Proceedings of SPIE (September 03 2008)
CCD's for High Resolution Imaging in the Near and Far...
Proceedings of SPIE (December 10 1986)

Back to Top