Amorphous thin films of ferroelectric oxides

Ren Xu; Yuhuan Xu; John D. Mackenzie

doi:10.1117/12.132020

7 December 1992 Amorphous thin films of ferroelectric oxides

Ren Xu, Yuhuan Xu, John D. Mackenzie

Proceedings Volume 1758, Sol-Gel Optics II; (1992) https://doi.org/10.1117/12.132020
Event: San Diego '92, 1992, San Diego, CA, United States

Abstract

Amorphous thin films of ferroelectric LiNbO₃ and Pb(Zr_0.52Ti_0.48)O₃ were prepared on a variety of substrates. Their properties were characterized in comparison with typical ferroelectric crystal behavior. It was found that these amorphous thin films show ferroelectric-like behaviors well before being crystallized. These findings suggest possible practical applications in areas where ferroelectric crystals are routinely in use. A structural model is proposed to account for the ferroelectric-like behaviors in the amorphous phases.

Citation Download Citation

Ren Xu, Yuhuan Xu, and John D. Mackenzie "Amorphous thin films of ferroelectric oxides", Proc. SPIE 1758, Sol-Gel Optics II, (7 December 1992); https://doi.org/10.1117/12.132020

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