Rapid thermal oxidation for VLSI gate dielectrics applications

Jason C.S. Woo; James S. Cable

doi:10.1117/12.142081

16 March 1993 Rapid thermal oxidation for VLSI gate dielectrics applications

Jason C.S. Woo, James S. Cable

Proceedings Volume 1804, Rapid Thermal and Laser Processing; (1993) https://doi.org/10.1117/12.142081
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

As device dimension is scaled into the deep-submicron regime, high quality thin-gate dielectric films with very uniform thickness are becoming increasingly necessary. The requirements on these thin gate oxides are--accurate control in growth, high breakdown field, low interface state density, good hot carrier reliability, good TDDB properties, and effective masking against impurity diffusion. Rapid thermal oxidation is one method to achieve high quality sub- 10 nm oxide films. In addition, by simultaneously or sequentially introducing gases other than O₂;, such as NH₃ or N₂O, during the oxidation processes, one can dramatically improve certain aspects of the resulting dielectrics. Films with very high dielectric breakdown voltage and hot-carrier-hardness have been achieved. When the process is optimized, the performance of these transistors is also excellent. This paper will discuss the challenges facing gate dielectrics for sub-half micron MOSFET's, and the use of rapid thermal oxidation to achieve high quality gate dielectrics for these applications.

Citation Download Citation

Jason C.S. Woo and James S. Cable "Rapid thermal oxidation for VLSI gate dielectrics applications", Proc. SPIE 1804, Rapid Thermal and Laser Processing, (16 March 1993); https://doi.org/10.1117/12.142081

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