Low compensation impurity band photoconductors

S. Pasquier; G. Sirmain; Claude Meny; A. G. Murray; Matthew J. Griffin; Peter A. R. Ade; L. Essaleh; J. Galibert; Jean Leotin

doi:10.1117/12.183058

19 August 1994 Low compensation impurity band photoconductors

S. Pasquier, G. Sirmain, Claude Meny, A. G. Murray, Matthew J. Griffin, Peter A. R. Ade, L. Essaleh, J. Galibert, Jean Leotin

Author Affiliations +

Proceedings Volume 2211, Millimeter and Submillimeter Waves; (1994) https://doi.org/10.1117/12.183058
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States

Abstract

Low compensation thin layer of antimony doped silicon impurity band photoconductors doped at the level 10¹⁷ - 10¹⁸ cm^-3 are evaluated in moderate background photon flux in the range of 10¹² s^-1 with the goal to approach photon noise limitation operation in spectral ranges near 300 cm^-1. Blocked impurity band photodetectors based on the same active layer geometry and thickness than the photoconductors were also implemented and measured. Spectral features including cut off wavenumbers specific to impurity band effects are investigated as a function of electric field and temperature. Spectroscopic evidence for a giant gain mechanism for photoelectrons excited from residual impurities in the blocking layer of BIB structure is found. Figures of merit of both IB and BIB elements were measured and physical mechanisms underlying the limitation of their performances are outlined.

Citation Download Citation

S. Pasquier, G. Sirmain, Claude Meny, A. G. Murray, Matthew J. Griffin, Peter A. R. Ade, L. Essaleh, J. Galibert, and Jean Leotin "Low compensation impurity band photoconductors", Proc. SPIE 2211, Millimeter and Submillimeter Waves, (19 August 1994); https://doi.org/10.1117/12.183058

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