Hot-wall-beam epitaxy and atomic-layer epitaxy of II-VI compounds for optoelectronics

Helmut Sitter

doi:10.1117/12.224964

16 October 1995 Hot-wall-beam epitaxy and atomic-layer epitaxy of II-VI compounds for optoelectronics

Helmut Sitter

Proceedings Volume 2373, Solid State Crystals: Materials Science and Applications; (1995) https://doi.org/10.1117/12.224964
Event: Solid State Crystals: Materials Science and Applications, 1994, Zakopane, Poland

Abstract

The characteristics of different crystal growth techniques which are successfully used for the fabrication of epitaxial layers of CdTe, ZnTe, CdSe and ZnSe are compared. These techniques can be divided into two groups: first, the hot-wall-epitaxy and the hot-wall-beam-epitaxy working close to thermodynamic equilibrium, and second the atomic-layer epitaxy and the self-limiting monolayer epitaxy, which take some advantage to operate far away from thermodynamic equilibrium. With both groups of techniques epilayers and layered structures of high quality could be grown.

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Helmut Sitter "Hot-wall-beam epitaxy and atomic-layer epitaxy of II-VI compounds for optoelectronics", Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); https://doi.org/10.1117/12.224964

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