Photoluminescence study of CdTe/ZnTe ultra-thin quantum wells grown by pulsed beam epitaxy

M. Garcia-Rocha; Isaac Hernandez-Calderon

doi:10.1117/12.511513

11 June 2003 Photoluminescence study of CdTe/ZnTe ultra-thin quantum wells grown by pulsed beam epitaxy

M. Garcia-Rocha, Isaac Hernandez-Calderon

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.511513
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

CdTe ultra-thin quantum wells (UTQWs) within ZnTe barriers were grown by pulsed beam epitaxy (PBE) on GaAs(001) substrates. In-situ reflection high energy electron diffraction (RHEED) patterns and real-time spot intensity measurements indicated a high structural quality of the QWs. Low temperature photoluminescence (PL) experiments indicated a clear influence of the growth temperature on the structural properties of the samples. The 2 monolayer (ML) thick UTQW grown at T_s = 270°C exhibited an intense and sharp peak at 2.26 eV whereas the 4 ML thick UTQW (T_s = 290°C) presented an intense peak at 2.13 eV and a weak one around 2.04 eV. This behavior is discussed in terms of Cd re-evaporation at the higher T_s.

Citation Download Citation

M. Garcia-Rocha and Isaac Hernandez-Calderon "Photoluminescence study of CdTe/ZnTe ultra-thin quantum wells grown by pulsed beam epitaxy", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.511513

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