Influence of material properties on some parameters of n-type InSb IR photoconductive detector

Cristiana E. A. Grigorescu; Stefan A. Manea; E. Elena; T. Botila; Mihail F. Lazarescu

doi:10.1117/12.203605

8 March 1995 Influence of material properties on some parameters of n-type InSb IR photoconductive detector

Cristiana E. A. Grigorescu, Stefan A. Manea, E. Elena, T. Botila, Mihail F. Lazarescu

Proceedings Volume 2461, ROMOPTO '94: Fourth Conference in Optics; (1995) https://doi.org/10.1117/12.203605
Event: ROMOPTO '94: 4th Conference on Optics, 1994, Bucharest, Romania

Abstract

This paper refers to the influence of the electrical and transport properties of n-type InSb single crystal on the parameters of the IR (3 - 5 micrometers ) photoconductive (PC)-detector. We consider a simple n-type PC element made of InSb single crystal. Some general physical features of the device, the device performance related to the material properties and the characterization techniques involved are described.

Citation Download Citation

Cristiana E. A. Grigorescu, Stefan A. Manea, E. Elena, T. Botila, and Mihail F. Lazarescu "Influence of material properties on some parameters of n-type InSb IR photoconductive detector", Proc. SPIE 2461, ROMOPTO '94: Fourth Conference in Optics, (8 March 1995); https://doi.org/10.1117/12.203605

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