Paper
1 May 1996 Room temperature photo-pumped lasing action of ZnCdSe/ZnSe/ZnMgSSe double heterostructure grown by metal-organic chemical vapor deposition
Atsushi Toda, Daisuke Imanishi, Katsunori Yanashima, Akira Ishibashi
Author Affiliations +
Abstract
An internal loss of 4.6 cm-1 is estimated from the cavity length dependence of photo-pumped blue-lasing at room temperature (RT) with ZnSe/ZnMgSSe double- heterostructure (DH) grown by metal-organic chemical vapor deposition (MOCVD). Operation of the first blue-green laser diode grown by MOCVD has been demonstrated at 77 K under pulsed current injection. The laser consists of a ZnCdSe single quantum-well ZnSe optical guiding layers, and ZnMgSSe/ZnSSe dually-stacked cladding layers grown on a (100) n-GaAs substrate. The observed stimulated emission is at a wavelength of 473 nm, with threshold current ranging from 90 to 180 mA (0.9 - 1.8 kA/cm2). The emission also shows a strong transverse electric polarization.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Atsushi Toda, Daisuke Imanishi, Katsunori Yanashima, and Akira Ishibashi "Room temperature photo-pumped lasing action of ZnCdSe/ZnSe/ZnMgSSe double heterostructure grown by metal-organic chemical vapor deposition", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); https://doi.org/10.1117/12.238947
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Metalorganic chemical vapor deposition

Cladding

Semiconductor lasers

Heterojunctions

Pulsed laser operation

Chemical vapor deposition

Doping

Back to Top