Paper
22 October 1996 GaAs homojunction interfacial workfunction internal photoemission far-infrared detectors
Henry X. Yuan, A. G. Unil Perera, M. H. Francombe, Sisira Kankanam Gamage, Hui Chun Liu, Margaret Buchanan, William J. Schaff
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Abstract
We report, for the first time, experimental FIR detector results based on p-GaAs homojunction interfacial workfunction internal photoemission (HIWIP) structures. The MBE grown samples consist of a multilayer (p+- p--p+-p--...) structure. The detector shows high responsivity over a wide wavelength range with a bias tunable cutoff wavelength ((lambda) c). Changing the emitter layer (p+) doping concentration (Ne) will result in different (lambda) cs. For a detector with Ne equals 3 multiplied by 1018 cm-3, an effective quantum efficiency of 9.2% (at 26.3 micrometer) with (lambda) c equals 100 micrometer is obtained. Various experimental results are discussed.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Henry X. Yuan, A. G. Unil Perera, M. H. Francombe, Sisira Kankanam Gamage, Hui Chun Liu, Margaret Buchanan, and William J. Schaff "GaAs homojunction interfacial workfunction internal photoemission far-infrared detectors", Proc. SPIE 2816, Infrared Detectors for Remote Sensing: Physics, Materials, and Devices, (22 October 1996); https://doi.org/10.1117/12.255156
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KEYWORDS
Sensors

Doping

Gallium arsenide

Absorption

Quantum efficiency

Temperature metrology

Photons

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