External cavity mid-infrared semiconductor lasers

Han Q. Le; George W. Turner; Juan R. Ochoa; M. J. Manfra; Christopher C. Cook; YongHang Zhang

doi:10.1117/12.273799

2 May 1997 External cavity mid-infrared semiconductor lasers

Han Q. Le, George W. Turner, Juan R. Ochoa, M. J. Manfra, Christopher C. Cook, YongHang Zhang

Proceedings Volume 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared; (1997) https://doi.org/10.1117/12.273799
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

GaSb-based and InAs-based semiconductor gain media with band-edge wavelengths between 3.3 to 4 micrometers were used in grating-tuned external cavity configuration. Output wavelength was tuned up to approximately 9.5% of the center wavelength; and power from few tens of mW to 0.2-W peak, 20- mW average was achieved at 80 K operation. The tuning range is approximately 2 - 3 times wider than those of near-IR semiconductor lasers, as expected for mid-IR semiconductors which have smaller electron masses. The external cavity laser had a multimode linewidth of 1 - 2 nm, which was approximately 10 to 20 times narrower than that of a free running laser. Analysis of the gain/loss spectral properties indicates that the tuning range is still severely limited by facet anti-reflection coating and non-optimal wafer structure. Model calculation indicates a tuning range a few times larger is possible with more optimal wafer design.

Citation Download Citation

Han Q. Le, George W. Turner, Juan R. Ochoa, M. J. Manfra, Christopher C. Cook, and YongHang Zhang "External cavity mid-infrared semiconductor lasers", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); https://doi.org/10.1117/12.273799

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