Photoelectrical properties of nonuniform GaAs structures under infrared laser illumination

Steponas P. Asmontas; Jonas Gradauskas; Dalius Seliuta; A. Silenas; Edmundas Sirmulis; I. Ya. Marmur

doi:10.1117/12.271703

4 April 1997 Photoelectrical properties of nonuniform GaAs structures under infrared laser illumination

Steponas P. Asmontas, Jonas Gradauskas, Dalius Seliuta, A. Silenas, Edmundas Sirmulis, I. Ya. Marmur

Proceedings Volume 3093, Nonresonant Laser-Matter Interaction (NLMI-9); (1997) https://doi.org/10.1117/12.271703
Event: Nonresonant Laser-Matter Interaction, 1996, St. Petersburg, Russian Federation

Abstract

We report our results of experimental study of photoelectrical properties of GaAs p-n and l-h junctions illuminated with pulsed carbon-dioxide laser light. The current-voltage and voltage-power characteristics are investigated. It is demonstrated that photoemission of hot carriers across the potential barrier and the crystal lattice heating are the dominant mechanisms in the photovoltage formation. The obtained results show that hot- carrier effects in inhomogeneous GaAs can be used to detect very short infrared laser pulses.

Citation Download Citation

Steponas P. Asmontas, Jonas Gradauskas, Dalius Seliuta, A. Silenas, Edmundas Sirmulis, and I. Ya. Marmur "Photoelectrical properties of nonuniform GaAs structures under infrared laser illumination", Proc. SPIE 3093, Nonresonant Laser-Matter Interaction (NLMI-9), (4 April 1997); https://doi.org/10.1117/12.271703

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