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High aspect ratio line and trench plating molds suitable for microactuator applications were etched in polymer using oxygen plasma in an rf inductive plasma etcher. A high vertical etch rate of approximately equals 2.5 micrometer/min in a polymer has been achieved for 2 micrometer wide lines and trenches, with even higher rates being observed for wider trenches due to the usual RIE lag effect. The lateral etch rate can be reduced by adjusting the inductive to bias power ratio, and by lowering the etch temperatures. Under optimum etching conditions, aspect ratios of close to 20:1 in a 2.5 micrometer line/2.0 micrometer spacing pattern and of greater than 20:1 in isolated 2.0 micrometer lines with greater than or equal to 5 micrometer spacing have been achieved.
Wen Y. Lee,Junbo Gao,Toshiki Hirano,Susanna Chan, andLong-Sheng Fan
"High-aspect-ratio etching in polymer for microactuator applications", Proc. SPIE 3223, Micromachining and Microfabrication Process Technology III, (5 September 1997); https://doi.org/10.1117/12.284471
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Wen Y. Lee, Junbo Gao, Toshiki Hirano, Susanna Chan, Long-Sheng Fan, "High-aspect-ratio etching in polymer for microactuator applications," Proc. SPIE 3223, Micromachining and Microfabrication Process Technology III, (5 September 1997); https://doi.org/10.1117/12.284471