Optimum design of GaAs waveguides intersecting modulator

Zhene Xu; Maria Rizzi; Beniamino Castagnolo

doi:10.1117/12.302391

15 March 1998 Optimum design of GaAs waveguides intersecting modulator

Zhene Xu, Maria Rizzi, Beniamino Castagnolo

Proceedings Volume 3276, Miniaturized Systems with Micro-Optics and Micromechanics III; (1998) https://doi.org/10.1117/12.302391
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

An intersecting waveguide modulator which utilizes the carrier injection effects is presented and characterized. Using O⁺ implantation to render the implanted region electrically inactive, a well confined injection carrier channel is formed. This area can be driven to function as waveguide or as antiwaveguide. A transversal electrode switches the modulator from the on-state to the off-state or vice versa. At the base of carrier induced refractive index modeling and the finite difference beam propagation method, an optimum design modeling is given out to optimize the switch performance and to obtain the smallest injection current of this modulator.

Citation Download Citation

Zhene Xu, Maria Rizzi, and Beniamino Castagnolo "Optimum design of GaAs waveguides intersecting modulator", Proc. SPIE 3276, Miniaturized Systems with Micro-Optics and Micromechanics III, (15 March 1998); https://doi.org/10.1117/12.302391

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