Bandgap renormalization: GaAs/AlGaAs quantum wells

Eric D. Jones; Mark Blount; Weng W. Chow; Hong Q. Hou; Jerry A. Simmons; Yongmin Kim; Thomas Schmiedel

doi:10.1117/12.316668

7 July 1998 Bandgap renormalization: GaAs/AlGaAs quantum wells

Eric D. Jones, Mark Blount, Weng W. Chow, Hong Q. Hou, Jerry A. Simmons, Yongmin Kim, Thomas Schmiedel

Proceedings Volume 3283, Physics and Simulation of Optoelectronic Devices VI; (1998) https://doi.org/10.1117/12.316668
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

Bandgap energy renormalization by many-body interactions has been studied in a series of n-type 8-nm-wide GaAs/AlGaAs single quantum wells using magnetoluminescence spectroscopy at 1.4 K and for magnetic fields up to 30 T. The 2D-carrier densities varied between 1 and 12 X 10¹¹ cm^-2. At the maximum 2D-carrier density, the bandgap energy difference between the doped and undoped samples was about 34 meV.

Citation Download Citation

Eric D. Jones, Mark Blount, Weng W. Chow, Hong Q. Hou, Jerry A. Simmons, Yongmin Kim, and Thomas Schmiedel "Bandgap renormalization: GaAs/AlGaAs quantum wells", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); https://doi.org/10.1117/12.316668

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