Step-flow growth of perovskite PbTiO3 thin films epitaxially grown on a miscut SrTiO3 substrate

Kiyotaka Wasa; Yoko Haneda; Toshifumi Sato; Hideaki Adachi; Isaku Kanno; Darrell G. Schlom; Susan Trolier-McKinstry; Qing Gang; Chang-Beom Eom

doi:10.1117/12.335874

22 December 1998 Step-flow growth of perovskite PbTiO₃ thin films epitaxially grown on a miscut SrTiO₃ substrate

Kiyotaka Wasa, Yoko Haneda, Toshifumi Sato, Hideaki Adachi, Isaku Kanno, Darrell G. Schlom, Susan Trolier-McKinstry, Qing Gang, Chang-Beom Eom

Author Affiliations +

Proceedings Volume 3481, Superconducting and Related Oxides: Physics and Nanoengineering III; (1998) https://doi.org/10.1117/12.335874
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

Continuous single crystal (001)PbTiO₃ thin films under a step-flow growth mode were epitaxially grown on the miscut (001)SrTiO₃ substrate with miscut angle of 1.7 degrees. A planar magnetron sputtering system was used for the epitaxial growth. The film thickness was ranged from 5 to 250 nm. The surface of the sputtered PbTiO₃ thin films comprised periodic striped patterns with step lines and atomically flat terraces. The typical step height and terrace width were 3 nm and 200 nm, respectively. The partial oxygen pressure during sputtering deposition affected the stability of the step-flow growth mode. Lower partial oxygen pressure stabilized the step-flow growth mode resulting in a layer growth. The PT thin films include the stress due to the tetragonal lattice deformation.

Citation Download Citation

Kiyotaka Wasa, Yoko Haneda, Toshifumi Sato, Hideaki Adachi, Isaku Kanno, Darrell G. Schlom, Susan Trolier-McKinstry, Qing Gang, and Chang-Beom Eom "Step-flow growth of perovskite PbTiO₃ thin films epitaxially grown on a miscut SrTiO₃ substrate", Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, (22 December 1998); https://doi.org/10.1117/12.335874

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