Paper
29 March 1999 Laser Fizeau interferometer for silicon wafer site flatness testing
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Abstract
Requirements on wafer flatness, like most semiconductor specifications, are becoming increasingly tight, with greater accuracy and resolution needed for measurements. In addition to traditional peak-to-valley surface deviation and root-mean- square roughness measurements, it is desirable to measure the flatness of silicon wafers over a small area, or site flatness. This involves dividing the wafer into many sub- regions and calculating the surface statistics for these smaller regions in addition to the overall wafer statistics. Veeco Metrology has developed a high-resolution phase-shifting laser Fizeau interferometer for site flatness testing. The system is designed with 40 mm X 40 mm square field and a 1000 X 1000 pixel CCD camera. Features as small as 100 micrometer may be measured by the system with high resolution, repeatability, and accuracy. A motorized stage allows any region of the wafer to be measured by the system such that problem areas do not escape measurement. This paper discusses the overall system design and presents data from the wafer flatness tester developed by Veeco. Data on lateral resolution, vertical repeatability and accuracy are presented. In addition, the site flatness statistics of a silicon wafer measured by the instrument are given.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Erik Novak, Artur G. Olszak, Ken Stumpe, Robert E. Knowlden, Leonid Malevanchik, and George Z. Angeli "Laser Fizeau interferometer for silicon wafer site flatness testing", Proc. SPIE 3619, Surface Characterization for Computer Disks, Wafers, and Flat Panel Displays, (29 March 1999); https://doi.org/10.1117/12.343704
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Cited by 2 scholarly publications.
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KEYWORDS
Semiconducting wafers

Silicon

Photovoltaics

Wafer testing

Fizeau interferometers

Interferometers

Imaging systems

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