Modeled and measured scatter from vias

John C. Stover; Craig A. Scheer; Vladimir I. Ivakhnenko; Yuri A. Eremin; Natalia Grishina

doi:10.1117/12.343713

29 March 1999 Modeled and measured scatter from vias

John C. Stover, Craig A. Scheer, Vladimir I. Ivakhnenko, Yuri A. Eremin, Natalia Grishina

Proceedings Volume 3619, Surface Characterization for Computer Disks, Wafers, and Flat Panel Displays; (1999) https://doi.org/10.1117/12.343713
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

This paper briefly reviews the use of a verified model to investigate light scatter metrology to detect the presence of defects in semiconductor circuit vias. Three types of defects are examined. Although defects can be detected, there are practical problems associated with separating defects from acceptable changes in dielectric film thickness.

Citation Download Citation

John C. Stover, Craig A. Scheer, Vladimir I. Ivakhnenko, Yuri A. Eremin, and Natalia Grishina "Modeled and measured scatter from vias", Proc. SPIE 3619, Surface Characterization for Computer Disks, Wafers, and Flat Panel Displays, (29 March 1999); https://doi.org/10.1117/12.343713

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available