Paper
4 November 1999 Photoconductivity kinetics and the nature of Yb-induced defect states in Pb1-xGexTe alloys
Evgenii P. Skipetrov, Natalia I. Chernova, Evgenii I. Slyn'ko, Yurii K. Vygranenko
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Abstract
In this paper galvanomagnetic properties and photoconductivity kinetics in Pb1-xGexTe alloys doped with Yb were investigated. The existing of Yb-induced level near the valence band top was established. High photosensitivity at temperature under 30 K and the effect of persistent photoconductivity at helium temperature were found. The photoconductivity kinetics revealed two types of relaxation processes: a fast one and a long duration one, that was explained assuming that doping with Yb leads to the formation of reconstructing Jahn-Teller centers in Pb1-xGexTe alloys.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Evgenii P. Skipetrov, Natalia I. Chernova, Evgenii I. Slyn'ko, and Yurii K. Vygranenko "Photoconductivity kinetics and the nature of Yb-induced defect states in Pb1-xGexTe alloys", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368380
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KEYWORDS
Ytterbium

Doping

Electrons

Germanium

Group IV-VI semiconductors

Helium

Gallium

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